Datasheet > 2SC2883

2SC2883

更新时间： 2024-09-14 14:53:15

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	609K
描述
双极型晶体管

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中文翻译

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数据手册

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2SC2883 数据手册

2SC2883

SOT-89 Transistor(NPN)

1. ^BASE

SOT-89

2. ^COLLECTOR

3. ^EMITTER

4.6

4.4

1.6

1.4

1.8

1.4

2.6

2.4

4.25

3.75

Features

0.8

MIN

0.53

0.40

0.48

2x)

0.35

1.5

Low voltage

0.44

0.37

0.13

3.0

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Dimensions in inches and (millimeters)

Symbol

V_CBO

Parameter

Value

Units

Collector-Base Voltage

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

1.5

P_C

0.5

℃

T_J

150

-55-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=1mA,I_E=0

V_(BR)CEOI_C=10mA,I_B=0

V_(BR)EBOI_E=1mA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=30V,I_E=0

0.1

320

μA

Emitter cut-off current

V_EB=5V,I_C=0

DC current gain

V_CE=2V,I_C=0.5A

I_C=1.5A,I_B=30mA

V_CE=2V,I_C=0.5A

V_CE=2V,I_C=500mA

V_CB=10V,I_E=0,f=1MHz

100

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

Transition frequency

f_T

120

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

100-200

160-320

Range

Marking

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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