Datasheet > 2SC2881U

2SC2881U

更新时间： 2024-10-15 14:55:47

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	307K
描述
功率三极管

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2SC2881U 数据手册

2SC2881U

NPN Silicon Epitaxial Planar Power Transistor

Power amplifier

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

120

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

800

160

Base Current

I_B

0.5 ¹⁾

Collector Power Dissipation

P_C

1 ²⁾

Junction Temperature

T_j

150

℃

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

250 ¹⁾

125 ²⁾

Thermal Resistance from Junction to Ambient

℃/W

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 5

Dated: 31/05/2023 Rev: 07

12 3 4 5

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