Datasheet > 2SC2883

2SC2883

更新时间： 2024-11-25 14:56:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1101K
描述
SOT-89-3L

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中文翻译

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数据手册

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2SC2883 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SC2883 TRANSISTOR (NPN)

1. ^BASE

FEATURES

Low voltage

2. ^COLLECTOR

3. ^EMITTER

MARKING

Solid dot = Green molding compound device.

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

Unit

Collector-Base Voltage

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

1.5

0.5

P_C

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=1mA,I_E=0

V_(BR)CEOI_C=10mA,I_B=0

V_(BR)EBOI_E=1mA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=30V,I_E=0

0.1

320

μA

Emitter cut-off current

V_EB=5V,I_C=0

DC current gain

V_CE=2V,I_C=0.5A

I_C=1.5A,I_B=30mA

V_CE=2V,I_C=0.5A

V_CE=2V,I_C=500mA

V_CB=10V,I_E=0,f=1MHz

100

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

Transition frequency

f_T

120

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

100-200

160-320

Range

www.jscj-elec.com

Rev. - 2.3

12 3 4

中文翻译

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