是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.41 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.8 A | 集电极-发射极最大电压: | 120 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 80 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 120 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC2881OTE12R | TOSHIBA |
获取价格 |
TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
2SC2881-TP | MCC |
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Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C | |
2SC2881U | SWST |
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功率三极管 | |
2SC2881Y | ETC |
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TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 800MA I(C) | SOT-89 | |
2SC2881-Y | MCC |
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NPN Silicon Power Transistors | |
2SC2881-Y-T | MCC |
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Transistor | |
2SC2881YTE12L | TOSHIBA |
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TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
2SC2881-Y-TP | MCC |
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Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C | |
2SC2881-Y-TP-HF | MCC |
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Small Signal Bipolar Transistor, | |
2SC2882 | KEXIN |
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Power Amplifier Applications |