5秒后页面跳转
2SC2881OTE12R PDF预览

2SC2881OTE12R

更新时间: 2024-11-25 13:42:03
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器晶体管
页数 文件大小 规格书
4页 144K
描述
TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

2SC2881OTE12R 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.65
外壳连接:COLLECTOR最大集电极电流 (IC):0.8 A
基于收集器的最大容量:30 pF集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):80
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzVCEsat-Max:1 V
Base Number Matches:1

2SC2881OTE12R 数据手册

 浏览型号2SC2881OTE12R的Datasheet PDF文件第2页浏览型号2SC2881OTE12R的Datasheet PDF文件第3页浏览型号2SC2881OTE12R的Datasheet PDF文件第4页 
2SC2881  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC2881  
Voltage Amplifier Applications  
Power Amplifier Applications  
Unit: mm  
High voltage: V  
= 120 V  
CEO  
High transition frequency: f = 120 MHz (typ.)  
T
Small flat package  
P
C
= 1.0 to 2.0 W (mounted on ceramic substrate)  
Complementary to 2SA1201  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
120  
120  
5
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
800  
160  
500  
mA  
mA  
C
PW-MINI  
JEDEC  
Base current  
I
B
P
C
JEITA  
SC-62  
2-5K1A  
Collector power dissipation  
mW  
P
C
1000  
TOSHIBA  
(Note 1)  
Junction temperature  
T
j
150  
°C  
°C  
Weight: 0.05 g (typ.)  
Storage temperature range  
T
stg  
55 to 150  
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)  
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-12-21  

与2SC2881OTE12R相关器件

型号 品牌 获取价格 描述 数据表
2SC2881-TP MCC

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SC2881U SWST

获取价格

功率三极管
2SC2881Y ETC

获取价格

TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 800MA I(C) | SOT-89
2SC2881-Y MCC

获取价格

NPN Silicon Power Transistors
2SC2881-Y-T MCC

获取价格

Transistor
2SC2881YTE12L TOSHIBA

获取价格

TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign
2SC2881-Y-TP MCC

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SC2881-Y-TP-HF MCC

获取价格

Small Signal Bipolar Transistor,
2SC2882 KEXIN

获取价格

Power Amplifier Applications
2SC2882 TOSHIBA

获取价格

TRANSISTOR (POWER, VOLTAGE AMPLIFIER APPLICATIONS)