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2SC2881_15 PDF预览

2SC2881_15

更新时间: 2024-11-28 01:23:59
品牌 Logo 应用领域
永而佳 - WINNERJOIN /
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描述
TRANSISTOR (NPN)

2SC2881_15 数据手册

  
RoHS  
2SC2881  
SOT-89  
1. BASE  
2SC2881 TRANSISTOR (NPN)  
FEATURES  
Power dissipation  
2. COLLECTOR  
3. EMITTER  
1
PCM:  
500  
mW (Tamb=25)  
2
3
Collector current  
ICM:  
800  
120  
mA  
V
Collector-base voltage  
V(BR)CBO  
:
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=1mA, IE=0  
MIN  
120  
120  
5
TYP  
MAX  
UNIT  
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
Ic=10mA, IB=0  
IE=1mA, IC=0  
V
µA  
µA  
VCB=120V, IE=0  
0.1  
0.1  
240  
1
IEBO  
VEB=5V, IC=0  
hFE(1)  
VCE(sat)  
VBE  
DC current gain  
VCE=5V, IC=100mA  
80  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
IC=500mA, IB=50mA  
CE=5V, IC=500mA  
V
1
MHz  
pF  
Transition frequency  
fT  
VCE=5V, IC=100mA  
120  
Cob  
30  
Collector output capacitance  
V
CB=10V, IE=0, f=1MHz  
CLASSIFICATION OF hFE(1)  
Rank  
O
Y
Range  
80-160  
120-240  
WEJ ELECTRONIC CO.,LTD  
Marking  
CO1  
CY1  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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