Datasheet > 2SC2881O

2SC2881O

更新时间： 2024-11-24 23:20:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	103K
描述
TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 800MA I(C) \| SOT-89

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中文翻译

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2SC2881O 数据手册

2SC2881

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2881

Voltage Amplifier Applications

Power Amplifier Applications

Unit: mm

High voltage: V

= 120 V

CEO

High transition frequency: f = 120 MHz (typ.)

Small flat package

= 1.0 to 2.0 W (mounted on ceramic substrate)

Complementary to 2SA1201

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

120

CBO

CEO

EBO

800

160

500

Base current

PW-MINI

JEDEC

―

Collector power dissipation

JEITA

SC-62

2-5K1A

1000

(Note 1)

TOSHIBA

Junction temperature

150

°C

Weight: 0.05 g (typ.)

Storage temperature range

−55 to 150

stg

Note 1: Mounted on ceramic substrate (250 mm²× 0.8 t)

2002-08-19

12 3 4

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2SC2881U	SWST	获取价格	功率三极管
2SC2881Y	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 800MA I(C) \| SOT-89
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2SC2881-Y-T	MCC	获取价格	Transistor
2SC2881YTE12L	TOSHIBA	获取价格	TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign
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2SC2881-Y-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor,