Datasheet > 2SC2873-Y(T2LDI,CF

2SC2873-Y(T2LDI,CF

更新时间： 2024-11-06 08:14:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	174K
描述
Small Signal Bipolar Transistor

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2SC2873-Y(T2LDI,CF 数据手册

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2SC2873

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC2873

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low saturation voltage: V

= 0.5 V (max) (I = 1 A)

CE (sat)

High-speed switching time: t

Small flat package

= 1.0 μs (typ.)

stg

= 1.0 to 2.0 W (mounted on a ceramic substrate)

Complementary to 2SA1213

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

0.4

500

JEDEC

JEITA

―

Collector power dissipation

SC-62

2-5K1A

1000

(Note 1)

TOSHIBA

Junction temperature

150

°C

Weight: 0.05 g (typ.)

Storage temperature range

stg

−55 to 150

Note 1: Mounted on a ceramic substrate (250 mm²× 0.8 t)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2012-10-16

12 3 4 5

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