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2SC2873Y-G PDF预览

2SC2873Y-G

更新时间: 2024-11-07 00:29:43
品牌 Logo 应用领域
上华 - COMCHIP 开关晶体管
页数 文件大小 规格书
4页 175K
描述
General Purpose Transistor

2SC2873Y-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:compliant
风险等级:5.65最大集电极电流 (IC):2 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
表面贴装:YES端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

2SC2873Y-G 数据手册

 浏览型号2SC2873Y-G的Datasheet PDF文件第2页浏览型号2SC2873Y-G的Datasheet PDF文件第3页浏览型号2SC2873Y-G的Datasheet PDF文件第4页 
General Purpose Transistor  
2SC2873-G Series (NPN)  
RoHS Device  
Features  
- Small flat package  
- High speed switching time.  
- Low collector-emitter saturation voltage.  
SOT-89-3L  
Circuit Diagram  
0.181(4.60)  
0.173(4.40)  
Collector  
2
1 : BASE  
0.061(1.55)  
REF.  
2 : COLLECTOR  
3 : EMITTER  
1
Base  
0.102(2.60)  
0.091(2.30)  
0.167(4.25)  
0.155(3.94)  
1
2
3
3
Emitter  
0.020(0.52)  
0.023(0.58)  
0.016(0.40)  
Maximum Ratings (at TA=25°C unless otherwise noted)  
0.013(0.32)  
Symbol  
Parameter  
Value  
Unit  
V
0.060(1.50)  
TYP.  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
VCBO  
VCEO  
VEBO  
IC  
50  
50  
5
0.118(3.00)  
TYP.  
V
V
0.063(1.60)  
0.055(1.40)  
Collector current  
2
A
Collector power dissipation  
PD  
500  
mW  
0.017(0.44)  
0.014(0.35)  
Thermal resistance from  
junction to ambient  
0.047(1.20)  
0.035(0.90)  
RθJA  
250  
°C/W  
Junction temperature  
Storage temperature  
TJ  
150  
°C  
°C  
Dimensions in inches and (millimeter)  
Tstg  
-55~+150  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
Typ  
Parameter  
Conditions  
Min  
Max  
Unit  
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
IC =100μA , IE=0  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
50  
50  
5
V
V
IC =1mA , IB=0  
IE =100μA , IC=0  
VCB=50V , IE=0  
V
µA  
µA  
ICBO  
IEBO  
0.1  
0.1  
VEB=5V , IC=0  
Emitter cut-off current  
VCE=2V , IC=0.5mA  
VCE=2V , IC=2mA  
IC=1A , IB=50mA  
IC=1A , IB=50mA  
VCE=2V , IC=0.5A  
VCB=10V, IE=0 , F=1MHZ  
hFE(1)  
70  
20  
240  
DC current gain  
hFE(2)  
Collector-Emitter saturation voltage  
Base-Emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
0.5  
1.2  
V
V
fT  
120  
30  
MHZ  
PF  
Collector output capacitance  
Cob  
Classification Of hFE  
2SC2873O-G  
70-140  
Part No.  
2SC2873Y-G  
Range  
120-240  
MY  
Marking  
MO  
REV: A  
Page 1  
Company reserves the right to improve product design , functions and reliability without notice.  
QW-BTR43  

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