Datasheet > 2SC2873YTE12R

2SC2873YTE12R

更新时间： 2024-09-16 14:39:23

品牌	Logo	应用领域
东芝 - TOSHIBA		开关晶体管
页数	文件大小	规格书
5页	162K
描述
TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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技术参数
数据手册

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2SC2873YTE12R 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.66
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	2 A
集电极-发射极最大电压：	50 V	配置：	SINGLE
最小直流电流增益 (hFE)：	20	JESD-30 代码：	R-PSSO-F3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	120 MHz
VCEsat-Max：	0.5 V	Base Number Matches：	1

2SC2873YTE12R 数据手册

2SC2873

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC2873

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low saturation voltage: V

= 0.5 V (max) (I = 1 A)

CE (sat)

High-speed switching time: t

Small flat package

= 1.0 μs (typ.)

stg

= 1.0 to 2.0 W (mounted on a ceramic substrate)

Complementary to 2SA1213

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

0.4

500

JEDEC

JEITA

―

Collector power dissipation

SC-62

2-5K1A

1000

(Note 1)

TOSHIBA

Junction temperature

150

°C

Weight: 0.05 g (typ.)

Storage temperature range

stg

−55 to 150

Note 1: Mounted on a ceramic substrate (250 mm²× 0.8 t)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2006-11-10

12 3 4 5

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