5秒后页面跳转
2SC2878-B PDF预览

2SC2878-B

更新时间: 2024-11-09 12:35:43
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管
页数 文件大小 规格书
4页 221K
描述
For Muting and Switching Applications

2SC2878-B 技术参数

是否Rohs认证: 不符合生命周期:End Of Life
零件包装代码:TO-92包装说明:2-5F1B, SC-43, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.46Is Samacsys:N
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):350
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

2SC2878-B 数据手册

 浏览型号2SC2878-B的Datasheet PDF文件第2页浏览型号2SC2878-B的Datasheet PDF文件第3页浏览型号2SC2878-B的Datasheet PDF文件第4页 
2SC2878  
TOSHIBA Transistor Silicon NPN Epitaxial Type  
2SC2878  
For Muting and Switching Applications  
Unit: mm  
High emitter-base voltage: V  
= 25 V (min)  
EBO  
High reverse h : Reverse h  
= 150 (typ.) (V = 2 V, I = 4 mA)  
CE C  
FE  
FE  
Low on resistance: R  
= 1 (typ.) (I = 5 mA)  
B
ON  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
50  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
20  
V
25  
V
I
300  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
60  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
400  
C
T
j
125  
T
stg  
55~125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TO-92  
SC-43  
TOSHIBA  
2-5F1B  
Weight: 0.21 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Collector cut-off current  
Emitter cut-off current  
Symbol  
Test Condition  
= 50 V, I = 0  
Min  
Typ.  
Max  
0.1  
Unit  
μA  
I
V
V
CBO  
CB  
EB  
E
I
= 25 V, I = 0  
0.1  
μA  
EBO  
C
h
FE  
(Note)  
DC current gain  
V
= 2 V, I = 4 mA  
200  
1200  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= 30 mA, I = 3 mA  
0.042  
0.61  
30  
0.1  
7
V
V
CE (sat)  
C
B
V
V
V
V
= 2 V, I = 4 mA  
C
BE  
CE  
CE  
CB  
Transition frequency  
f
= 6 V, I = 4 mA  
MHz  
pF  
T
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
4.8  
ob  
E
Turn-on time  
t
160  
500  
130  
on  
Switching time  
ns  
Storage time  
Fall time  
t
stg  
t
f
<
Duty cycle 2%  
=
Note: h classification A: 200~700, B: 350~1200  
FE  
1
2007-11-01  

与2SC2878-B相关器件

型号 品牌 获取价格 描述 数据表
2SC2879 TOSHIBA

获取价格

TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE)
2SC2879 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
2SC2879A TOSHIBA

获取价格

SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUP
2SC287A(B) NEC

获取价格

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic
2SC287A(B)E NEC

获取价格

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic
2SC2880 KEXIN

获取价格

High Voltage Switching Applications
2SC2880 TOSHIBA

获取价格

TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)
2SC2880 TYSEMI

获取价格

High Voltage : VCEO = 150V High Transition Frequency : fT = 120MHz(typ.)
2SC2880_15 KEXIN

获取价格

NPN Transistors
2SC2880-HF_15 KEXIN

获取价格

NPN Transistors