Datasheet > 2SC2881

2SC2881

更新时间： 2024-10-15 14:55:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1472K
描述
SOT-89-3L

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中文翻译

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数据手册

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2SC2881 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SC2881

TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

Small Flat Package

High Transition Frequency

3. EMITTER

High Voltage

Complementary to 2SA1201

APPLICATIONS

Power Amplifier and Voltage Amplifier

MARKING

CO1

CY1

Solid dot = Green molding compound device.

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

120

Unit

Collector-Emitter Voltage

120

Emitter-Base Voltage

Collector Current

800

℃/W

℃

P_C

Collector Power Dissipation

500

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

250

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=1mA,I_E=0

Min

120

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=10mA,I_B=0

I_E=1mA,I_C=0

V_CB=120V,I_E=0

0.1

240

µA

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

DC current gain

h_FE

V_CE=5V, I_C=100mA

I_C=500mA,I_B=50mA

V_CE=5V, I_C=0.5A

VCE=5V,IC=100mA

V_CB=10V, I_E=0, f=1MHz

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

f_T

120

MHz

Transition frequency

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

RANK

80–160

120–240

RANGE

www.jscj-elec.com

Rev. - 2.2

12 3 4

中文翻译

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与2SC2881相关器件

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2SC2881_04	TOSHIBA	获取价格	Voltage Amplifier Applications Power Amplifier Applications
2SC2881_15	UTC	获取价格	VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS
2SC2881_15	WINNERJOIN	获取价格	TRANSISTOR (NPN)
2SC2881A	FOSHAN	获取价格	SOT-89
2SC2881G-O-AB3-R	UTC	获取价格	Small Signal Bipolar Transistor,
2SC2881G-X-AB3-R	UTC	获取价格	VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS
2SC2881O	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 800MA I(C) \| SOT-89
2SC2881-O	MCC	获取价格	NPN Silicon Power Transistors
2SC2881OTE12R	TOSHIBA	获取价格	TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign
2SC2881-TP	MCC	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C