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2SC2880_15 PDF预览

2SC2880_15

更新时间: 2024-11-26 01:16:15
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科信 - KEXIN /
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3页 1032K
描述
NPN Transistors

2SC2880_15 数据手册

 浏览型号2SC2880_15的Datasheet PDF文件第2页浏览型号2SC2880_15的Datasheet PDF文件第3页 
SMD Type  
Transistors  
NPN Transistors  
2SC2880  
1.70 0.1  
Features  
High Voltage:VCEO=150V  
High Transition Frequency  
Small Flat Package  
0.42 0.1  
0.46 0.1  
Complementary to 2SA1200  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Collector Current - Continuous  
Base Current  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
200  
150  
V
5
I
C
50  
mA  
mW  
IB  
10  
Collector Power Dissipation  
(Note.1)  
500  
P
C
800  
Junction Temperature  
Storage Temperature Range  
T
J
150  
Tstg  
-55 to 150  
Note.1: Mounted on ceramic substrate(250mm 2X0.8t)  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Ic= 100 μAI = 0  
Ic= 1 mAI = 0  
Min  
200  
150  
5
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
E
B
I
E
= 100μAI  
CB= 200V , I  
EB= 5V , I =0  
C
= 0  
I
CBO  
EBO  
V
V
E
= 0  
0.1  
0.1  
0.5  
1.2  
1
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
Base - emitter voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=10 mA, I  
B
B
=1mA  
=1mA  
V
C=10 mA, I  
V
BE  
FE  
V
V
CE= 5V, I  
CE= 5V, I  
C
= 30mA  
= 10mA  
DC current gain  
h
C
70  
240  
5
Collector output capacitance  
Transition frequency  
C
ob  
T
V
V
CB= 10V, I  
CE= 30V, I  
E
= 0,f=1MHz  
= 10mA  
3.5  
pF  
f
C
120  
MHz  
Classification of hfe  
Type  
Range  
Marking  
2SC2880-O  
70-140  
AO  
2SC2880-Y  
120-240  
AY  
1
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