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2SC2873-Y(TE12R,F) PDF预览

2SC2873-Y(TE12R,F)

更新时间: 2024-11-06 15:25:11
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 174K
描述
Small Signal Bipolar Transistor

2SC2873-Y(TE12R,F) 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.66
Base Number Matches:1

2SC2873-Y(TE12R,F) 数据手册

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2SC2873  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
2SC2873  
Power Amplifier Applications  
Power Switching Applications  
Unit: mm  
Low saturation voltage: V  
= 0.5 V (max) (I = 1 A)  
C
CE (sat)  
High-speed switching time: t  
Small flat package  
= 1.0 μs (typ.)  
stg  
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)  
Complementary to 2SA1213  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
5
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
I
2
C
Base current  
I
0.4  
500  
B
JEDEC  
JEITA  
P
P
C
C
Collector power dissipation  
mW  
SC-62  
2-5K1A  
1000  
(Note 1)  
TOSHIBA  
Junction temperature  
T
150  
°C  
°C  
j
Weight: 0.05 g (typ.)  
Storage temperature range  
T
stg  
55 to 150  
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)  
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2012-10-16  

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