Datasheet > 2SB905_07

2SB905_07

更新时间： 2024-10-30 03:56:31

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
5页	155K
描述
Power Amplifier Applications

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中文翻译

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数据手册

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2SB905_07 数据手册

2SB905

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SB905

Power Amplifier Applications

Unit: mm

•

Complementary to SD1220

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−150

−6

Collector-emitter voltage

Emitter-base voltage

Collector current

−1.5

Base current

−1.0

Ta = 25°C

Tc = 25°C

1.0

Collector power

dissipation

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-7B1A

Weight: 0.36 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

JEDEC

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

2006-11-21

12 3 4 5

中文翻译

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