Datasheet > 2SB906

2SB906

更新时间： 2024-11-22 12:47:23

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管放大器
页数	文件大小	规格书
1页	39K
描述
Silicon PNP Epitaxial

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中文翻译

获取价格

数据手册

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2SB906 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial

2SB906

TO-252

Unit: mm

Features

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Low collector saturation voltage.

High power dissipation.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-60

-7

-3

-0.5

Base current

I^B

Collector power dissipation

Junction temperature

Storage temperature range

P^C

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

-100

Unit

ìA

Collector cut-off current

Emitter cut-off current

VCB = -60 V, IE = 0

VEB = -7 V, IC = 0

I^EBO

Collector-emitter breakdown voltage

V^(BR)CEOIC=-50mA, IB=0

V^CE= -5 V, IC = -0.5 A

V^CE= -5 V, IC = -3 A

V^{CE (sat)}IC = -3 A, IB = -0.3 A

-60

200

DC current gain

h^FE

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Turn-on time

-1

-1.7

-1.5

V^BE

f^T

VCE = -5V, IC =-0.5 A

MHz

ìs

C^ob

t^on

t^stg

t^f

VCB = -10V, IE = 0, f = 1 MHz

150

0.4

1.7

0.5

-I^B1=IB2=0.2A,VCC=-30V,duty cycle1%

Storage time

ìs

Fall time

ìs

hFE Classification

Rank

hFE

60 120

100 200

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