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2SB906_10 PDF预览

2SB906_10

更新时间: 2024-11-06 12:20:03
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 164K
描述
Audio Frequency Power Amplifier Application

2SB906_10 数据手册

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2SB906  
TOSHIBA Transistor Silicon PNP Diffused Type (PCT process)  
2SB906  
Audio Frequency Power Amplifier Application  
Unit: mm  
Low collector saturation voltage  
: V = 1.0 V (typ.) (I = 3 A, I = 0.3 A)  
CE (sat)  
C
B
High power dissipation: P = 20 W (Tc = 25°C)  
C
Complementary to 2SD1221  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
60  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
7  
I
3  
C
Base current  
I
0.5  
1.0  
B
Ta = 25°C  
Tc = 25°C  
Collector power  
dissipation  
P
W
JEDEC  
JEITA  
C
20  
Junction temperature  
T
150  
°C  
°C  
j
TOSHIBA  
2-7J1A  
Storage temperature range  
T
stg  
55 to 150  
Weight: 0.36 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2010-02-05  

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