生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | 风险等级: | 5.67 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 功耗环境最大值: | 1 W |
最大功率耗散 (Abs): | 20 W | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 9 MHz | VCEsat-Max: | 1.7 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB906-Y(TE16L1,NQ | TOSHIBA |
获取价格 |
TRANS PNP 60V 3A PW-MOLD | |
2SB906-Y(TE16L1,NQ) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor | |
2SB907 | TOSHIBA |
获取价格 |
TRANSISTOR (SWITCHING, HANNER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS) | |
2SB907(2-7B1A) | TOSHIBA |
获取价格 |
TRANSISTOR 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7B1A, 3 PIN, BIP General Pur | |
2SB907(SM) | TOSHIBA |
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TRANSISTOR,BJT,PNP,40V V(BR)CEO,3A I(C),TO-252AA | |
2SB907_07 | TOSHIBA |
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Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applic | |
2SB907_10 | TOSHIBA |
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Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applic | |
2SB908 | TOSHIBA |
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TRANSISTOR (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS) | |
2SB908(2-7B1A) | TOSHIBA |
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TRANSISTOR 4000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP | |
2SB908(2-7B2A) | TOSHIBA |
获取价格 |
TRANSISTOR 4000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign |