Datasheet > 2SB908_10

2SB908_10

更新时间： 2024-11-22 07:30:19

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器开关放大器脉冲功率放大器电机
页数	文件大小	规格书
5页	166K
描述
Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

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数据手册

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2SB908_10 数据手册

2SB908

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SB908

Switching Applications

Unit: mm

Hammer Drive, Pulse Motor Drive Applications

Power Amplifier Applications

•

High DC current gain: h

= 2000 (min) (V

= −2 V, I = −1 A)

FE (1)

CE C

Low saturation voltage: V

= −1.5 V (max) (I = −3 A)

CE (sat)

Complementary to 2SD1223

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−100

−80

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−4

Base current

−0.4

1.0

JEDEC

JEITA

―

Ta = 25°C

Tc = 25°C

Collector power

dissipation

―

TOSHIBA

2-7J1A

Junction temperature

150

°C

Weight: 0.36 g (typ.)

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

COLLECTOR

BASE

≈ 300 Ω

≈ 4.5 kΩ

EMITTER

2010-02-05

12 3 4 5

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