是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.89 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 80 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 1000 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB908(SM) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,DARLINGTON,PNP,80V V(BR)CEO,4A I(C),TO-252VAR | |
2SB908_07 | TOSHIBA |
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Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applic | |
2SB908_10 | TOSHIBA |
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Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applic | |
2SB909M | ROHM |
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Epitaxial Planar PNP Silicon Translstors | |
2SB909M/P | ROHM |
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Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB909M/PQ | ROHM |
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Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB909M/PR | ROHM |
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Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB909M/QR | ROHM |
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Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB909M/R | ROHM |
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Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB909MC2 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon |