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2SB908(2-7J1A) PDF预览

2SB908(2-7J1A)

更新时间: 2024-11-06 15:23:15
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
5页 184K
描述
TRANSISTOR 4000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP General Purpose Small Signal

2SB908(2-7J1A) 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.89
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):1000JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SB908(2-7J1A) 数据手册

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2SB908  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SB908  
Switching Applications  
Unit: mm  
Hammer Drive, Pulse Motor Drive Applications  
Power Amplifier Applications  
High DC current gain: h  
= 2000 (min) (V  
= 2 V, I = 1 A)  
FE (1)  
CE C  
Low saturation voltage: V  
= 1.5 V (max) (I = 3 A)  
C
CE (sat)  
Complementary to 2SD1223  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
100  
80  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5  
I
4  
C
Base current  
I
0.4  
1.0  
B
JEDEC  
JEITA  
Ta = 25°C  
Tc = 25°C  
Collector power  
dissipation  
P
W
C
15  
TOSHIBA  
2-7J1A  
Junction temperature  
T
150  
°C  
°C  
j
Weight: 0.36 g (typ.)  
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Equivalent Circuit  
COLLECTOR  
BASE  
300 Ω  
4.5 kΩ  
EMITTER  
1
2010-02-05  

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