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2SB906_07 PDF预览

2SB906_07

更新时间: 2024-11-22 03:56:31
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 161K
描述
Audio Frequency Power Amplifier Application

2SB906_07 数据手册

 浏览型号2SB906_07的Datasheet PDF文件第2页浏览型号2SB906_07的Datasheet PDF文件第3页浏览型号2SB906_07的Datasheet PDF文件第4页 
2SB906  
TOSHIBA Transistor Silicon PNP Diffused Type (PCT process)  
2SB906  
Audio Frequency Power Amplifier Application  
Unit: mm  
Low collector saturation voltage  
: V = 1.0 V (typ.) (I = 3 A, I = 0.3 A)  
CE (sat)  
C
B
High power dissipation: P = 20 W (Tc = 25°C)  
C
Complementary to 2SD1221  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
60  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
7  
I
3  
C
Base current  
I
0.5  
1.0  
B
Ta = 25°C  
Tc = 25°C  
Collector power  
dissipation  
P
W
C
20  
Junction temperature  
T
150  
°C  
°C  
j
JEDEC  
JEITA  
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-7B1A  
Weight: 0.36 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/Derating Concept and Methods) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
JEDEC  
JEITA  
TOSHIBA  
2-7J1A  
Weight: 0.36 g (typ.)  
1
2006-11-21  

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