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2SB905Y PDF预览

2SB905Y

更新时间: 2024-11-21 23:20:07
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
5页 120K
描述
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1.5A I(C) | TO-252AA

2SB905Y 数据手册

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2SB905  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SB905  
Power Amplifier Applications  
Unit: mm  
·
Complementary to SD1220  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
150  
150  
6  
V
V
V
A
A
CBO  
CEO  
EBO  
I
1.5  
C
Base current  
I
1.0  
B
Ta = 25°C  
1.0  
Collector power  
P
W
C
dissipation  
Tc = 25°C  
10  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
55 to 150  
stg  
JEDEC  
JEITA  
TOSHIBA  
2-7B1A  
Weight: 0.36 g (typ.)  
JEDEC  
JEITA  
TOSHIBA  
2-7J1A  
Weight: 0.36 g (typ.)  
1
2002-07-23  

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