Datasheet > 2SB906

2SB906

更新时间： 2024-11-22 12:32:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管放大器
页数	文件大小	规格书
1页	62K
描述
Low collector saturation voltage. High power dissipation.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB906 数据手册

Product specification

2SB906

TO-252

Unit: mm

Features

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Low collector saturation voltage.

High power dissipation.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-60

-7

-3

-0.5

Base current

I^B

Collector power dissipation

Junction temperature

Storage temperature range

P^C

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

Unit

ìA

Collector cut-off current

Emitter cut-off current

V^CB= -60 V, I^E= 0

V^EB= -7 V, I^C= 0

-100

I^EBO

Collector-emitter breakdown voltage

V^(BR)CEOI^C=-50mA, I^B=0

V^CE= -5 V, I^C= -0.5 A

VCE = -5 V, IC = -3 A

V^{CE (sat)}I^C= -3 A, I^B= -0.3 A

-60

200

DC current gain

h^FE

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Turn-on time

-1

-1.7

-1.5

V^BE

f^T

V^CE= -5V, I^C=-0.5 A

MHz

ìs

C^ob

t^on

t^stg

t^f

V^CB= -10V, I^E= 0, f = 1 MHz

150

0.4

1.7

0.5

-I^B1=I^B2=0.2A,V^CC=-30V,duty cycle1%

Storage time

ìs

Fall time

ìs

hFE Classification

Rank

hFE

60 120

100 200

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

中文翻译

下载PDF

与2SB906相关器件

型号	品牌	获取价格	描述	数据表
2SB906(2-7B2A)	TOSHIBA	获取价格	TRANSISTOR 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Pur
2SB906(2-7J1A)	TOSHIBA	获取价格	TRANSISTOR 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP
2SB906_07	TOSHIBA	获取价格	Audio Frequency Power Amplifier Application
2SB906_10	TOSHIBA	获取价格	Audio Frequency Power Amplifier Application
2SB906O	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-251
2SB906-O	TOSHIBA	获取价格	TRANSISTOR Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
2SB906-O(2-7B1A)	TOSHIBA	获取价格	TRANSISTOR 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP
2SB906O(2-7B1A)	TOSHIBA	获取价格	TRANSISTOR 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP
2SB906-O(2-7B2A)	TOSHIBA	获取价格	TRANSISTOR 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Pur
2SB906O(2-7J1A)	TOSHIBA	获取价格	TRANSISTOR 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP