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2SB905-Y(2-7B1A) PDF预览

2SB905-Y(2-7B1A)

更新时间: 2024-09-16 06:03:55
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器晶体管
页数 文件大小 规格书
5页 170K
描述
TRANSISTOR 1500 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal

2SB905-Y(2-7B1A) 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.91外壳连接:COLLECTOR
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):160
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHz

2SB905-Y(2-7B1A) 数据手册

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2SB905  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SB905  
Power Amplifier Applications  
Unit: mm  
Complementary to SD1220  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
150  
150  
6  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
I
1.5  
C
Base current  
I
1.0  
B
Ta = 25°C  
Tc = 25°C  
1.0  
Collector power  
dissipation  
P
W
C
10  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-7J1A  
Weight: 0.36 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2010-02-05  

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