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2SB905_10 PDF预览

2SB905_10

更新时间: 2024-11-01 07:30:19
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器功率放大器
页数 文件大小 规格书
5页 152K
描述
Power Amplifier Applications

2SB905_10 数据手册

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2SB905  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SB905  
Power Amplifier Applications  
Unit: mm  
Complementary to SD1220  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
150  
150  
6  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
I
1.5  
C
Base current  
I
1.0  
B
Ta = 25°C  
Tc = 25°C  
1.0  
Collector power  
dissipation  
P
W
C
10  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-7J1A  
Weight: 0.36 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2010-02-05  

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