Datasheet > 2SB905-R(TE16L1,F)

2SB905-R(TE16L1,F)

更新时间： 2024-11-23 09:46:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	150K
描述
TRANSISTOR,BJT,PNP,150V V(BR)CEO,1.5A I(C),TO-252AA

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2SB905-R(TE16L1,F) 数据手册

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2SB905

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SB905

Power Amplifier Applications

Unit: mm

•

Complementary to 2SD1220

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−150

−6

Collector-emitter voltage

Emitter-base voltage

Collector current

−1.5

Base current

−1.0

Ta = 25°C

Tc = 25°C

1.0

Collector power

dissipation

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

JEDEC

JEITA

―

Note 1: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-03-10

12 3 4 5

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