生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.31 | 最大集电极电流 (IC): | 0.7 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 350 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB831BCUL | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3 | |
2SB831C | ETC |
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 700MA I(C) | SOT-143RVAR | |
2SB831-C | RENESAS |
获取价格 |
SMALL SIGNAL TRANSISTOR | |
2SB833 | ETC |
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TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 30A I(C) | TO-3 | |
2SB834 | SAVANTIC |
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Silicon PNP Power Transistors | |
2SB834 | UTC |
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HIGH VOLTAGE TRANSISTOR | |
2SB834 | TGS |
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It is intented for use in power amplifier and switching applications. | |
2SB834 | WINNERJOIN |
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TRANSISTOR (PNP) | |
2SB834 | MOSPEC |
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POWER TRANSISTORS(3.0A,60V,30W) | |
2SB834 | Wing Shing |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |