Datasheet > 2SB834B

2SB834B

更新时间： 2024-11-19 17:00:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	341K
描述
60V,3A,General Purpose PNP Bipolar Transistor

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中文翻译

获取价格

数据手册

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2SB834B 数据手册

PNP Silicon Epitaxial Planar Transistor

2SB834B

Features



Epitaxial planar die construction

Complementary to 2SD880B

Mechanic al Data



Case: TO-263

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

TO-263

Ordering Information

Part Number

Package

TO-263

Shipping Quantity

Marking Code

2SB834B

50 pcs / Tube or 800 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-60

-7

Unit

-3

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

Unit

Junction Temperature

T_J

-55 ~ +150

°C

Storage Temperature Range

T_STG

°C

STM0478A: November 2020

www.gmesemi.com

12 3 4

中文翻译

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