Datasheet > 2SB834

2SB834

更新时间： 2024-11-21 17:01:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	351K
描述
60V,3A,Medium Power PNP Bipolar Transistor

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2SB834 数据手册

Product Specification

PNP Epitaxial Silicon Transistor

2SB834

FEATURES



Low collector-emitter saturation voltage

V_CE(sat)= 1V(Max) @ I_C= 3A, I_B= 0.3A

DC current gain

h_FE= 60-200 @ I_C= 0.5A

Complememtary to PNP 2SD880

TO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

2SB834

TO-220AB

50 pcs / Tube

2SB834

MAXIMUM RATING operating temperature range applies unless otherwise specified

Value

-60

-7

Symbol

Parameter

Unit

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

V_CEO

Emitter-Base Voltage

Collector Current

V_EBO

Continuous

Peak

-3

-6

I_C

Base Current

I_B

P_C

-0.5

1.5

Collector Dissipation

Junction and Storage Temperature

T_j,T_stg

-55 to +150

℃

STM0231A: May 2019

www.gmesemi.com

12 3 4

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