2SB834

更新时间： 2024-11-20 03:56:31

品牌	Logo	应用领域
TRSYS		晶体晶体管局域网
页数	文件大小	规格书
1页	66K
描述
Plastic-Encapsulated Transistors

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中文翻译

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数据手册

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2SB834 数据手册

Transys

Electronics

I M I T E D

TO-220 Plastic-Encapsulated Transistors

2SB834 TRANSISTOR (PNP)

TO-220

1. BASE

FEATURES

Power dissipation

2. COLLECTOR

3. EMITTER

P_CM

1.5

W (Tamb=25℃)

Collector current

I_CM

Collector-base voltage

V_(BR)CBO

1 2 3

-3

-60

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-100µA, I_E=0

Ic=-50mA, I_B=0

I_E=-100µA, I_C=0

V_CB=-60V, I_E=0

V_EB=-7V, I_C=0

MIN

-60

-7

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

µA

-100

200

I_EBO

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=-5V, I_C=-500mA

DC current gain

V_CE=-5V, I_C=-3A

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Turn-on Time

I_C=-3A, I_B=-0.3A

_CE=-5V, I_C=-500mA

-1

MHz

µs

f_T

V_CE=-5V,I _C=-500mA

_CB=-10V, I_E=0, f=1MHz

C_ob

150

0.4

1.7

0.5

t_on

V_CC=-30V, I_c=-2A,

I_B!=I_B2=-0.2A

t_stg

µs

Storage Time

t_off

µs

Turn-off Time

CLASSIFICATION OF h_FE(1)

Rank

Range

60-120

100-200

中文翻译

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