Datasheet > 2SB834GR(TO-220)

2SB834GR(TO-220)

更新时间： 2024-11-18 20:09:35

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描述
Transistor

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中文翻译

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技术参数
数据手册

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2SB834GR(TO-220) 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	3 A
配置：	Single	最小直流电流增益 (hFE)：	150
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	30 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SB834GR(TO-220) 数据手册

UTC2SB834

PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR

DESCRIPTION

Low frequency power amplifier applications.

TO-220

1:BASE 2: COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS _{( Operating temperature range applies unless otherwise specified )}

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Total Power Dissipation(Ta=25°C)

Collector current

Junction Temperature

Storage Temperature

Base Current

SYMBOL

VCBO

VCEO

VEBO

TSTG

RATING

UNIT

°C

150

-55 ~ +150

0.5

ELECTRICAL CHARACTERISTICS_{(Ta=25°C,unless otherwise specified)}

PARAMETER

Collector-emitter breakdown voltage

Collector cut-off current

SYMBOL

BVCEO

ICBO

TEST CONDITIONS

Ic=50mA

MIN TYP MAX UNIT

µA

VCB=60V

VEB=7V

100

300

Emitter cut-off current

IEBO

Collector-emitter saturation voltage

Collector-emitter on voltage

DC current gain

VCE(SAT)

VCE(ON)

hFE1

IC=3A,IB=0.3A

VCE=5V,IC=0.5A

IC=0.5A,VCE=5V

IC=3A,VCE=5V

VCE=5V,IC=0.5A

0.7

hFE2

Current gain bandwidth product

MHZ

CLASSIFICATION of hFE1

RANK

150-300

RANGE

60-120

100-200

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R203-014,B

12 3 4

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