Datasheet > 2SB834

2SB834

更新时间： 2024-09-23 02:57:43

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描述
PNP Plastic-Encapsulated Transistor

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数据手册

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2SB834 数据手册

2SB834

-3A , -60V

PNP Plastic-Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

ITO-220J

FEATURES

ꢀ

Power switching applications

CLASSIFICATION OF h_FE

2SB834-O

2SB834-Y

100~200

Product-Rank

60~120

Range

Collector

Millimeter

REF.

Min.

14.80

9.50

Max.

15.60

10.50

Min.

Max.

4.00

1.50

0.90

2.74

2.90

Base

3.00

0.90

0.50

2.34

2.50

13.00 REF.

4.30

2.50

2.40

0.30

4.70

3.20

2.90

0.75

Emitter

φ 3.5 REF.

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-60

Collector to Emitter Voltage

Emitter to Base Voltage

-60

-7

Collector Current - Continuous

Collector Power Dissipation

Thermal resistance, junction to case

Junction, Storage Temperature

-3

P_C

R_θJC

T_J, T_STG

4.16

°C / W

°C

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol Min.

Typ. Max.

Unit

Test Condition

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut – Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-60

-7

I_C= -1mA, I_E=0

I_C= -50mA, I_B=0

I_E= -1mA, I_C=0

-100

µA

V_CB= -60V, I_E=0

V_EB= -7V, I_C=0

Emitter Cut – Off Current

I_EBO

-100

200

V_CE= -5V, I_C= -500mA

V_CE= -5V, I_C= -3A

I_C= -3A, I_B= -0.3A

V_CE= -5V, I_C= -0.5A

DC Current Gain

h_FE

-1

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

Turn-on Time

V_CE(sat)

V_BE(sat)

f_T

MHz V_CE= -5V, I_C= -500mA, f =1MHz

t_ON

0.7

Storage Time

t_STG

µs B1= -IB2= -0.2A, I_C=2A, V_CC=30V

Turn-off Time

t_OFF

0.9

Note:

1. Pulse test.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

14-Aug-2012 Rev. A

Page 1 of 1

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