Datasheet > 2SB834

2SB834

更新时间： 2024-11-19 14:53:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	808K
描述
TO-220F

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中文翻译

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技术参数
数据手册

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2SB834 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.54
Base Number Matches：	1

2SB834 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Transistors

2SB834 TRANSISTOR (PNP)

TO – 220F

FEATURES

1. BASE

Low Collector -emitter saturation voltage

V_CE(sat)=1.0V(Max)_@I_C=-3A,I_B=-0.3A

DC current Gain

2. COLLECTOR

3. EMITTER

h_FE=60-200_@I_C=0.5A

Complementary to NPN 2SD880

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Equivalent Circuit

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XXXX=Code

2SB834

XXXX

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector- Base Voltage

Value

-60

-7

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

-3

P_C

1.5

83.3

R_θJC

Thermal resistance, junction to case

Operation Junction and Storage Temperature Range

℃/W

℃

T_J,T_stg

-55-150

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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