Datasheet > 2SB834

2SB834

更新时间： 2024-11-21 14:55:59

品牌	Logo	应用领域
鲁光 - LGE		局域网双极型晶体管
页数	文件大小	规格书
2页	671K
描述
双极型晶体管

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技术参数
数据手册

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2SB834 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	60
Collector Current - Continuous：	3	DC current gain - Min：	60
DC current gain - Max：	200	Transition frequency：	9
Package：	TO-220AB	Storage Temperature Range：	-55-150
class：	Transistors

2SB834 数据手册

2SB834(PNP)

TO-220 Transistor

TO-220

1. BASE

2. COLLECTOR

3. EMITTER

Features

Low Collector -emitter saturation voltage

V_CE(sat)=1.0v(Max)_@I_C=-3A,I_B=-0.3A

DC current Gain

h_FE=60-200_@I_C=0.5A

Complementary to NPN 2SD880

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Dimensions in inches and (millimeters)

-60

Collector- Base Voltage

-60

Collector-Emitter Voltage

Emitter-Base Voltage

-7

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-3

P_C

1.5

℃

T_J

150

-55-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

-60

-7

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-1mA,I_E=0

V_(BR)CEOI_C=-50mA,I_B=0

V_(BR)EBOI_E=-1mA,I_C=0

I_CBO

I_EBO

h_FE(1)*

h_FE(2)*

V_CE(sat)*

V_BE*

f_T

V_CB=-60V,I_E=0

-100

200

μA

Emitter cut-off current

V_EB=-7V,I_C=0

V_CE=-5V,I_C=-500mA

V_CE=-5V,I_C=-3A

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Turn-on Time

I_C=-3A,I_B=-0.3A

-1

V_CE=-5V,I_C=-500mA

V_CE=-5V,I_C=-500mA, f=1MHz

MHz

μs

t_on

0.4

1.7

0.5

V_CC=-30V,I_c=-2A,

I_B!=I_B2=-0.2A

Storage Time

t_stg

μs

Turn-off Time

*Pulse test.

t_off

μs

CLASSIFICATION OF h_FE(1)

Rank

Range

60-120

100-200

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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