Datasheet > 2SB834

2SB834

更新时间： 2024-09-20 22:35:55

品牌	Logo	应用领域
永盛 - Wing Shing		晶体放大器晶体管功率放大器局域网
页数	文件大小	规格书
1页	29K
描述
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB834 数据手册

2SB834

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY POWER AMPLIFIER

TO-220

Complement to 2SD880

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base voltage

Collector Current (DC)

Collector Dissipation(Tc=25°C)

Junction Temperature

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-60

-7

-3

°C

150

-50~150

Tstg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25°C)

Characterristic

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector- Emitter Saturation Voltage

Current Gain Bandwidth Product

Symbol

Test Condition

Min

Typ

Max

Unit

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VCB= -60V , IE=0

VEB= -7V, IC=0

VCE= -5V, IC=-0.5A

VCE= -5V, IC=-3A

IC=-3A , IB=-0.3A

VCE= -5V , IC=-0.5A

-100

300

µA

-0.4

-1.0

MHZ

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

中文翻译

下载PDF

与2SB834相关器件

型号	品牌	获取价格	描述	数据表
2SB834_09	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
2SB834_15	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
2SB834_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB834_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB834B	BL Galaxy Electrical	获取价格	60V,3A,General Purpose PNP Bipolar Transistor
2SB834G-GR-TF3-T	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB834G-O-TF3-T	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB834GR(TO-126)	UTC	获取价格	Transistor
2SB834GR(TO-220)	UTC	获取价格	Transistor
2SB834-GR-TA3-T	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti