Datasheet > 2SB834

2SB834

更新时间： 2024-11-17 22:35:55

品牌	Logo	应用领域
永盛 - Wing Shing		晶体放大器晶体管功率放大器局域网
页数	文件大小	规格书
1页	29K
描述
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

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中文翻译

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数据手册

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2SB834 数据手册

2SB834

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY POWER AMPLIFIER

TO-220

Complement to 2SD880

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base voltage

Collector Current (DC)

Collector Dissipation(Tc=25°C)

Junction Temperature

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-60

-7

-3

°C

150

-50~150

Tstg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25°C)

Characterristic

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector- Emitter Saturation Voltage

Current Gain Bandwidth Product

Symbol

Test Condition

Min

Typ

Max

Unit

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VCB= -60V , IE=0

VEB= -7V, IC=0

VCE= -5V, IC=-0.5A

VCE= -5V, IC=-3A

IC=-3A , IB=-0.3A

VCE= -5V , IC=-0.5A

-100

300

µA

-0.4

-1.0

MHZ

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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