Datasheet > 2SB834

2SB834

更新时间： 2024-09-22 06:19:47

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管局域网
页数	文件大小	规格书
4页	78K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB834 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB834

DESCRIPTION

·With TO-220 package

·Low collector saturation voltage

·Complement to type 2SD880

APPLICATIONS

·Audio frequency power amplifier

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-60

UNIT

Open base

-60

Open collector

-7

-3

I_B

Base current

-0.5

1.5

T_a=25℃

T_C=25℃

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3 4

中文翻译

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2SB834B	BL Galaxy Electrical	获取价格	60V,3A,General Purpose PNP Bipolar Transistor
2SB834G-GR-TF3-T	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB834G-O-TF3-T	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB834GR(TO-126)	UTC	获取价格	Transistor
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2SB834-GR-TA3-T	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti