是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SIP | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.77 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 180 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | NOT SPECIFIED | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 120 MHz | VCEsat-Max: | 1 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1436C6/P | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
2SB1436C6/PQ | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
2SB1436C6/PR | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
2SB1436C6/Q | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
2SB1436C6/QR | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
2SB1436C6/R | ROHM |
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Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
2SB1436P | ETC |
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | TO-126 | |
2SB1436Q | ETC |
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | TO-126 | |
2SB1436R | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1438 | PANASONIC |
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Silicon PNP epitaxial planer type(For low-frequency output amplification) |