Datasheet > 2SB1440

2SB1440

更新时间： 2024-11-26 07:30:07

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	219K
描述
TRANSISTOR(PNP)

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中文翻译

获取价格

数据手册

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2SB1440 数据手册

2SB1440

TRANSISTOR(PNP)

SOT-89

1. ^BASE

FEATURES

Low collector-emitter saturation voltage V_CE(sat)

For low-frequency output amplification

Complementary to 2SD2185

2. ^COLLECTOR

3. ^EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-50

Units

-50

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-2

P_C

500

150

-55-150

T_J

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-50

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-10μA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=-10μA, I_C=0

V_CB=-50V, I_E=0

V_EB=-5V, I_C=0

-1

μA

Emitter cut-off current

I_EBO

h_FE1

V_CE=-2V, I_C=-200mA

V_CE=-2V, I_C=-1A

120

340

DC current gain

h_FE2

Collector-emitter saturation voltage

Base- emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

I_C=-1A, I_B=-50mA

-0.3

I_C=-1A, I_B=-50mA

-1..2

V_CE=-10V, I_C=50mA, f=200MHz

V_CB=-10V, I_E=0, f=1MHz

MHz

Collector output capacitance

CLASSIFICATION OF h_FE1

Rank

C_ob

Range

120-240

170-340

Marking

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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