Datasheet > 2SB1440

2SB1440

更新时间： 2024-01-02 22:35:40

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
3页	504K
描述
SOT-89 Plastic-Encapsulate Transistors

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中文翻译

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技术参数
数据手册

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2SB1440 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.71	Base Number Matches：	1

2SB1440 数据手册

WILLAS

2SB1440

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (PNP)

FEATURES

SOT-89

1. ^BASE

Low collector-emitter saturation voltage V_CE(sat)

For low-frequency output amplification

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

2. ^COLLECTOR

3. ^EMITTER

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol Para

meter

Value

-50

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-2

P_C

500

T_J

150

℃

T_stg

Storage Temperature

-55~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

I_C=-10μA, I_E=0

Min

-50

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=-10μA, I_C=0

V_CB=-50V, I_E=0

-1

μA

Emitter cut-off current

I_EBO

V_EB=-5V, I_C=0

h_FE1

V_CE=-2V, I_C=-200mA

V_CE=-2V, I_C=-1A

120

340

DC current gain

h_FE2

Collector-emitter saturation voltage

Base- emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

I_C=-1A, I_B=-50mA

V_CE=-10V, I_C=50mA, f=200MHz

V_CB=-10V, I_E=0, f=1MHz

-0.3

-1..2

MHz

Collector output capacitance

CLASSIFICATION OF h _FE1

Rank

C_ob

Range

120-240

170-340

Marking

2012-10

WILLAS ELECTRONIC CORP.

12 3

中文翻译

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与2SB1440相关器件

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