Datasheet > 2SB1440

2SB1440

更新时间： 2024-11-27 14:53:35

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	571K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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2SB1440 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	50
Collector Current - Continuous：	2	DC current gain - Min：	120
DC current gain - Max：	340	Transition frequency：	80
Package：	SOT-89	Storage Temperature Range：	-55-150
class：	Transistors

2SB1440 数据手册

2SB1440

SOT-89 Transistor(PNP)

1. ^BASE

SOT-89

2. ^COLLECTOR

3. ^EMITTER

4.6

4.4

1.6

1.4

1.8

1.4

Features

2.6

2.4

4.25

3.75

Low collector-emitter saturation voltage V_CE(sat)

For low-frequency output amplification

Complementary to 2SD2185

0.8

MIN

0.53

0.40

0.48

2x)

0.35

1.5

0.44

0.37

0.13

3.0

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Dimensions in inches and (millimeters)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

-50

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-2

P_C

500

150

-55-150

T_J

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-50

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-10μA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=-10μA, I_C=0

V_CB=-50V, I_E=0

V_EB=-5V, I_C=0

-1

μA

Emitter cut-off current

I_EBO

h_FE1

V_CE=-2V, I_C=-200mA

V_CE=-2V, I_C=-1A

120

340

DC current gain

h_FE2

Collector-emitter saturation voltage

Base- emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

I_C=-1A, I_B=-50mA

-0.3

I_C=-1A, I_B=-50mA

-1..2

V_CE=-10V, I_C=50mA, f=200MHz

V_CB=-10V, I_E=0, f=1MHz

MHz

Collector output capacitance

CLASSIFICATION OF h_FE1

Rank

C_ob

Range

120-240

170-340

Marking

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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与2SB1440相关器件

型号	品牌	获取价格	描述	数据表
2SB1440Q	PANASONIC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIP3-F1
2SB1440R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 2A I(C) \| SC-62
2SB1440S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 2A I(C) \| SC-62
2SB1443	ROHM	获取价格	Power Transistor (-50V, -2A)
2SB1443	KEXIN	获取价格	Power Transistor
2SB1443	TYSEMI	获取价格	Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA.
2SB1443_11	ROHM	获取价格	Power Transistor (?50V, ?2A)
2SB1443P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 5A I(C) \| SIP
2SB1443Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 5A I(C) \| SIP
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