Datasheet > 2SB1440

2SB1440

更新时间： 2024-10-15 18:09:51

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	535K
描述
SOT-89

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中文翻译

获取价格

数据手册

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2SB1440 数据手册

2SB1440

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to 2SD2185

 Low Collector-Emitter Saturation Voltage V_CE(sat)

 For Low-Frequency Output Amplification

 Surface Mount Device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

Value

-50

Unit

Collector-Base Voltage

V_CEO

Collector-Emitter Voltage

-50

V_EBO

Emitter-Base Voltage

-5

Collector Current

-2

Collector Power Dissipation

500

°C

Junction Temperature

Storage Temperature

150

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =-10uA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-50

-5

，

V(BR)CEO

V(BR)EBO

I_CBO

I_C=-1mA，I_B=0

I_E=-10uA，I_C=0

V_CB=-50V, I_E=0

-1

Emitter cut-off current

I_EBO

uA V_EB=-5V, I_C=0

V_CE=-2V, I_C=-200mA

h_FE1

120

340

DC current gain

h_FE2

V_CE=-2V, I_C=-1A

I_C=-1A，I_B=-50mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

-0.3

-1.2

V_CE=-10V,I_C=-50mA,f=200

MHz

V_CB=-10V, I_E=0, f=1

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

120-240

170-340

Marking

1 / 4

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与2SB1440相关器件

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2SB1440Q	PANASONIC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIP3-F1
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