5秒后页面跳转
2SB1431-AZ PDF预览

2SB1431-AZ

更新时间: 2024-11-26 20:56:03
品牌 Logo 应用领域
日电电子 - NEC 局域网放大器晶体管
页数 文件大小 规格书
6页 132K
描述
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

2SB1431-AZ 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.21
外壳连接:ISOLATED最大集电极电流 (IC):8 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):500JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

2SB1431-AZ 数据手册

 浏览型号2SB1431-AZ的Datasheet PDF文件第2页浏览型号2SB1431-AZ的Datasheet PDF文件第3页浏览型号2SB1431-AZ的Datasheet PDF文件第4页浏览型号2SB1431-AZ的Datasheet PDF文件第5页浏览型号2SB1431-AZ的Datasheet PDF文件第6页 
ꢔꢌꢋꢌꢆꢆꢀꢝꢉꢉꢋ  
ꢀꢁꢂꢁꢃꢄꢅꢆꢆꢇꢄꢈꢉꢊꢆꢆꢋꢊꢌꢅꢀꢁꢀꢋꢄꢊ  
ꢍꢀꢎꢏꢐꢑꢏ  
ꢇꢅꢇꢆꢆꢀꢁꢂꢁꢃꢄꢅꢆꢆꢉꢇꢁꢋꢌꢒꢁꢌꢂꢆꢆꢋꢊꢌꢅꢀꢁꢀꢋꢄꢊꢆꢆꢓꢔꢌꢊꢂꢁꢅꢕꢋꢄꢅꢆꢆꢃꢄꢅꢅꢉꢃꢋꢁꢄꢅꢖ  
ꢗꢄꢊꢆꢆꢂꢄꢈꢘꢗꢊꢉꢙꢚꢉꢅꢃꢛꢆꢆꢇꢄꢈꢉꢊꢆꢆꢌꢜꢇꢂꢁꢗꢁꢉꢊꢀꢆꢆꢌꢅꢔꢆꢆꢂꢄꢈꢘꢀꢇꢉꢉꢔꢆꢆꢀꢈꢁꢋꢃꢝꢁꢅꢕ  
PACKAGE DRAWING (UNIT: mm)  
The 2SB1431 is a Darlington power transistor that can directly  
drive from the IC output. This transistor is ideal for motor drivers  
and solenoid drivers in such as OA and FA equipment.  
In addition, a small resin-molded insulation type package  
contributes to high-density mounting and reduction of mounting  
cost.  
FEATURES  
• High hFE due to Darlington connection:  
hFE 2,000 (VCE = 2 V, IC = 3 A)  
• Mold package that does not require an insulating board or  
insulation bushing  
QUALITY GRADES  
• Standard  
ꢏꢜꢅꢂꢇ!ꢁꢖꢅꢈ"ꢁꢆꢆꢅꢂꢇꢗꢁꢆ  
ꢋꢊꢈ$ꢙꢕꢅ  
Please refer to “Quality Grades on NEC Semiconductor Devices”  
(Document No. C11531E) published by NEC Corporation to know  
the specification of quality grade on the devices and its  
recommended applications.  
ꢍꢊꢈ"ꢁꢜꢜꢅꢂꢇꢁ!  
%ꢊꢈꢏꢄꢗꢇꢇꢅ!  
ꢉꢙꢚꢁꢞꢌꢂꢉꢅꢋꢆꢆꢃꢁꢊꢃꢚꢁꢋ  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
Ratings  
100  
100  
7.0  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
VCEO  
V
VEBO  
V
8.0  
IC(DC)  
A
12  
IC(pulse)*  
IB(DC)  
A
0.8  
A
PT (Tc = 25°C)  
PT (Ta = 25°C)  
Tj  
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
25  
W
W
°C  
°C  
2.0  
150  
55 to +150  
Tstg  
* PW 10 ms, duty cycle 50%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢉꢁꢊꢈꢀꢋꢌꢋꢍꢎꢏꢐꢋꢑꢒꢀꢓꢒꢒꢈꢔꢋꢕꢇꢈꢅꢖꢗꢇꢗꢁꢆꢘ  
ꢀꢙꢇꢅꢈꢚꢃꢛꢜꢗꢕꢝꢅꢖꢈꢈꢞ !ꢗꢜꢈꢈꢍꢒꢒꢍꢈꢉꢈꢈ"ꢚꢔ#ꢘ  
ꢚ!ꢗꢆꢇꢅꢖꢈꢗꢆꢈꢐꢙ ꢙꢆ  
2002  
©

与2SB1431-AZ相关器件

型号 品牌 获取价格 描述 数据表
2SB1431-K RENESAS

获取价格

暂无描述
2SB1431-K NEC

获取价格

暂无描述
2SB1431-K-AZ RENESAS

获取价格

暂无描述
2SB1431-L NEC

获取价格

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1431-L RENESAS

获取价格

暂无描述
2SB1431-L-AZ RENESAS

获取价格

8A, 100V, PNP, Si, POWER TRANSISTOR
2SB1431-L-AZ NEC

获取价格

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1431-M NEC

获取价格

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1431-M RENESAS

获取价格

8A, 100V, PNP, Si, POWER TRANSISTOR
2SB1431-M-AZ RENESAS

获取价格

8A, 100V, PNP, Si, POWER TRANSISTOR