2SB1432

更新时间： 2024-09-18 22:52:39

品牌	Logo	应用领域
日电电子 - NEC		晶体开关放大器晶体管功率放大器
页数	文件大小	规格书
6页	107K
描述
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

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2SB1432 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SB1432

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

ORDERING INFORMATION

The 2SB1432 is a Darlington power transistor that can be directly

driven from the output of an IC. This transistor is ideal for OA and FA

equipment such as motor and solenoid drivers.

Part No.

Package

2SB1432

Isolated TO-220

In addition,

a small resin-molded insulation type package

contributes to high-density mounting and reduction of mounting cost.

(Isolated TO-220)

FEATURES

• High h^FEdue to Darlington connection

h^FE≥ 1,000 @V^CE= −2.0 V, I^C= −10 A)

• Mold package that does not require an insulation board or insulation

bushing

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Parameter

Symbol

V^CBO

Conditions

Ratings

−100

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

V^CEO

−8.0

V^EBO

–

I^C(DC)

–

PW ≤ 300 µs,

I^C(pulse)

duty cycle ≤ 10%

−1.0

Base current (DC)

I^B(DC)

P^T

T^C= 25°C

T^A= 25°C

Total power dissipation

°C

2.0

Junction temperature

Storage temperature

T^j

150

−55 to +150

T^stg

INTERNAL EQUIVALENT CIRCUIT

1. Base

2. Collector

3. Emitter

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D14859EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

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与2SB1432相关器件

型号	品牌	获取价格	描述	数据表
2SB1432-AZ	NEC	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1433	HITACHI	获取价格	SMALL SIGNAL TRANSISTOR
2SB1433RF	HITACHI	获取价格	2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1433RR	HITACHI	获取价格	2000mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1433TZ	HITACHI	获取价格	2000mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1434	PANASONIC	获取价格	Silicon PNP epitaxial planer type(For low-frequency output amplification)
2SB1434-HW	PANASONIC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SB1434R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 2A I(C) \| SIP
2SB1434S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 2A I(C) \| SIP
2SB1434-SZ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon