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2SB1434S PDF预览

2SB1434S

更新时间: 2024-11-07 23:20:07
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 73K
描述
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | SIP

2SB1434S 数据手册

 浏览型号2SB1434S的Datasheet PDF文件第2页浏览型号2SB1434S的Datasheet PDF文件第3页 
Transistors  
2SB1434  
Silicon PNP epitaxial planer type  
Unit: mm  
2.5 0.1  
1.05  
0.05  
For low-frequency output amplification  
Complementary to 2SD2177  
6.9 0.1  
4.0  
(1.45)  
0.8  
0.7  
I Features  
0.65 max.  
Low collector to emitter saturation voltage VCE(sat)  
Allowing supply with the radial taping  
0.45+00..015  
2.5 0.5 2.5 0.5  
2
I Absolute Maximum Ratings Ta = 25°C  
1
3
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
50  
Note) In addition to the  
lead type shown in  
the upper figure,  
the type as shown  
in the lower figure  
is also available.  
1: Emitter  
2: Collector  
3: Base  
50  
V
5  
V
MT2 Type Package  
3  
A
IC  
2  
A
Collector power dissipation *  
Junction temperature  
Storage temperature  
PC  
1
W
°C  
°C  
Tj  
150  
1.2 0.1  
Tstg  
55 to +150  
0.65  
max.  
Note) : Printed circuit board: Copper foil area of 1 cm2 or more, and the  
*
+
0.1  
0.450.05  
board thickness of 1.7 mm for the collector portion  
(HW Type)  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
ICBO  
Conditions  
VCB = −20 V, IE = 0  
Min  
Typ  
Max  
Unit  
µA  
V
Collector cutoff current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
0.1  
VCBO  
VCEO  
VEBO  
IC = −10 µA, IE = 0  
50  
50  
5  
IC = −1 mA, IB = 0  
V
IE = −10 µA, IC = 0  
V
1
2
*
Forward current transfer ratio *  
hFE1  
hFE2  
VCE = −2 V, IC = −200 mA  
VCE = −2 V, IC = −1 A  
120  
60  
340  
1
Collector to emitter saturation voltage *  
Base to emitter saturation voltage *  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
IC = −1 A, IB = −50 mA  
IC = −1 A, IB = −50 mA  
VCB = −10 V, IE = 50 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
0.2 0.3  
0.85 1.2  
110  
V
V
1
MHz  
pF  
Collector output capacitance  
Cob  
40  
60  
Note) 1: Pulse measurement  
*
2: Rank classification  
*
Rank  
R
S
No-rank  
hFE1  
120 to 240  
170 to 340  
120 to 340  
Product of no-rank is not classified and have no indication for rank.  
1

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