Datasheet > 2SB1434S

2SB1434S

更新时间： 2024-11-22 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	73K
描述
TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 2A I(C) \| SIP

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中文翻译

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2SB1434S 数据手册

Transistors

2SB1434

Silicon PNP epitaxial planer type

Unit: mm

2.5 0.1

1.05

0.05

For low-frequency output amplification

Complementary to 2SD2177

6.9 0.1

4.0

(1.45)

0.8

0.7

I Features

0.65 max.

• Low collector to emitter saturation voltage V_CE(sat)

• Allowing supply with the radial taping

0.45⁺−⁰0.^.0¹5

2.5 0.5 2.5 0.5

I Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

−50

Note) In addition to the

lead type shown in

the upper figure,

the type as shown

in the lower figure

is also available.

1: Emitter

2: Collector

3: Base

−50

−5

MT2 Type Package

−3

I_C

−2

Collector power dissipation ^*

Junction temperature

Storage temperature

P_C

°C

T_j

150

1.2 0.1

T_stg

−55 to +150

0.65

max.

Note) : Printed circuit board: Copper foil area of 1 cm²or more, and the

0.1

0.45_−0.05

board thickness of 1.7 mm for the collector portion

(HW Type)

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

I_CBO

Conditions

V_CB= −20 V, I_E= 0

Min

Typ

Max

Unit

µA

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

− 0.1

V_CBO

V_CEO

V_EBO

I_C= −10 µA, I_E= 0

−50

−5

I_C= −1 mA, I_B= 0

I_E= −10 µA, I_C= 0

Forward current transfer ratio ^*

h_FE1

h_FE2

V_CE= −2 V, I_C= −200 mA

V_CE= −2 V, I_C= −1 A

120

340

Collector to emitter saturation voltage ^*

Base to emitter saturation voltage ^*

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

I_C= −1 A, I_B= −50 mA

V_CB= −10 V, I_E= 50 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

− 0.2 − 0.3

− 0.85 −1.2

110

MHz

Collector output capacitance

C_ob

Note) 1: Pulse measurement

2: Rank classification

Rank

No-rank

h_FE1

120 to 240

170 to 340

120 to 340

Product of no-rank is not classified and have no indication for rank.

12 3

中文翻译

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与2SB1434S相关器件

型号	品牌	获取价格	描述	数据表
2SB1434-SZ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SB1435	PANASONIC	获取价格	Silicon PNP epitaxial planar type
2SB1435R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SB1435S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SB1436	ROHM	获取价格	Low Frequency Transistor(-20V,-5A)
2SB1436	ISC	获取价格	Silicon PNP Power Transistors
2SB1436	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1436/PQ	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
2SB1436/PR	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
2SB1436/Q	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/

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