Datasheet > 2SB1435R

2SB1435R

更新时间： 2024-11-22 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	63K
描述
TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 2A I(C) \| TO-221VAR

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数据手册

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2SB1435R 数据手册

Power Transistors

2SB1435

Silicon PNP epitaxial planar type

Unit: mm

7.5±±.ꢀ

4.5±±.ꢀ

For low-frequency output amplification

I Features

•

Low collector to emitter saturation voltage V_CE(sat)

Large collector current I_C

Allowing automatic insertion with radial taping

±.65±±.1

±.85±±.1

1.±±±.1

±.8 C

±.7±±.1

1.15±±.ꢀ

I Absolute Maximum Ratings T_C= 25°C

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

±.5±±.1

±.4±±.1

−50

±.8 C

ꢀ

−50

−5

1 : Emitter

2 : Collector

3 : Base

ꢀ.5±±.ꢀ

−3

−2

I_C

MT-3 (MT3 Type Package)

Collector power dissipation

Junction temperature

Storage temperature

P_C

1.5

°C

T_j

150

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Symbol

I_CBO

Conditions

Min

Typ

Max

Unit

µA

V_CB= −20 V, I_E= 0

I_C= −10 µA, I_E= 0

− 0.1

V_CBO

V_CEO

V_EBO

−50

−5

I_C= −1 mA, I_B= 0

I_E= −10 µA, I_C= 0

h_FE1

V_CE= −2 V, I_C= −200 mA

V_CE= −2 V, I_C= −1 A

I_C= −1 A, I_B= −50 mA

120

340

h_FE2

V_CE(sat)

V_BE(sat)

f_T

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

− 0.2 − 0.3

− 0.85 −1.2

V_CB= −10 V, I_E= 50 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

Note) : Rank classification

Rank

h_FE1

120 to 240 170 to 340

12 3

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