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2SB1434-HW PDF预览

2SB1434-HW

更新时间: 2024-11-10 13:04:11
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 63K
描述
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

2SB1434-HW 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):2 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SB1434-HW 数据手册

 浏览型号2SB1434-HW的Datasheet PDF文件第2页 
Transistors  
2SB1434  
Silicon PNP epitaxial planer type  
Unit: mm  
2.5 0.1  
1.05  
0.05  
For low-frequency output amplification  
Complementary to 2SD2177  
6.9 0.1  
4.0  
(1.45)  
0.8  
0.7  
I Features  
0.65 max.  
Low collector to emitter saturation voltage VCE(sat)  
Allowing supply with the radial taping  
0.45+00..015  
2.5 0.5 2.5 0.5  
2
I Absolute Maximum Ratings Ta = 25°C  
1
3
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
50  
Note) In addition to the  
lead type shown in  
the upper figure,  
the type as shown  
in the lower figure  
is also available.  
1: Emitter  
2: Collector  
3: Base  
50  
V
5  
V
MT2 Type Package  
3  
A
IC  
2  
A
Collector power dissipation *  
Junction temperature  
Storage temperature  
PC  
1
W
°C  
°C  
Tj  
150  
1.2 0.1  
Tstg  
55 to +150  
0.65  
max.  
Note) : Printed circuit board: Copper foil area of 1 cm2 or more, and the  
*
+
0.1  
0.450.05  
board thickness of 1.7 mm for the collector portion  
(HW Type)  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
ICBO  
Conditions  
VCB = −20 V, IE = 0  
Min  
Typ  
Max  
Unit  
µA  
V
Collector cutoff current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
0.1  
VCBO  
VCEO  
VEBO  
IC = −10 µA, IE = 0  
50  
50  
5  
IC = −1 mA, IB = 0  
V
IE = −10 µA, IC = 0  
V
1
2
*
Forward current transfer ratio *  
hFE1  
hFE2  
VCE = −2 V, IC = −200 mA  
VCE = −2 V, IC = −1 A  
120  
60  
340  
1
Collector to emitter saturation voltage *  
Base to emitter saturation voltage *  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
IC = −1 A, IB = −50 mA  
IC = −1 A, IB = −50 mA  
VCB = −10 V, IE = 50 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
0.2 0.3  
0.85 1.2  
110  
V
V
1
MHz  
pF  
Collector output capacitance  
Cob  
40  
60  
Note) 1: Pulse measurement  
*
2: Rank classification  
*
Rank  
R
S
No-rank  
hFE1  
120 to 240  
170 to 340  
120 to 340  
Product of no-rank is not classified and have no indication for rank.  
1

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