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2SB1431-M PDF预览

2SB1431-M

更新时间: 2024-11-23 12:59:59
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
8页 251K
描述
8A, 100V, PNP, Si, POWER TRANSISTOR

2SB1431-M 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.21外壳连接:ISOLATED
最大集电极电流 (IC):8 A集电极-发射极最大电压:100 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):2000
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

2SB1431-M 数据手册

 浏览型号2SB1431-M的Datasheet PDF文件第2页浏览型号2SB1431-M的Datasheet PDF文件第3页浏览型号2SB1431-M的Datasheet PDF文件第4页浏览型号2SB1431-M的Datasheet PDF文件第5页浏览型号2SB1431-M的Datasheet PDF文件第6页浏览型号2SB1431-M的Datasheet PDF文件第7页 
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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