2SB1431-K

更新时间： 2024-11-23 13:04:11

品牌	Logo	应用领域
日电电子 - NEC		晶体开关放大器晶体管功率双极晶体管功率放大器局域网
页数	文件大小	规格书
6页	133K
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中文翻译

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数据手册

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2SB1431-K 数据手册

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ꢍꢀꢎꢏꢐꢑꢏ

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PACKAGE DRAWING (UNIT: mm)

The 2SB1431 is a Darlington power transistor that can directly

drive from the IC output. This transistor is ideal for motor drivers

and solenoid drivers in such as OA and FA equipment.

In addition, a small resin-molded insulation type package

contributes to high-density mounting and reduction of mounting

cost.

FEATURES

• High h^FEdue to Darlington connection:

h^FE≥ 2,000 (V^CE= −2 V, I^C= −3 A)

• Mold package that does not require an insulating board or

insulation bushing

QUALITY GRADES

• Standard

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ꢋꢊꢈ$ꢙꢕꢅ

Please refer to “Quality Grades on NEC Semiconductor Devices”

(Document No. C11531E) published by NEC Corporation to know

the specification of quality grade on the devices and its

recommended applications.

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%ꢊꢈꢏꢄꢗꢇꢇꢅ!

ꢉꢙꢚꢁꢞꢌꢂꢉꢅꢋꢆꢆꢃꢁꢊꢃꢚꢁꢋ

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

Ratings

−100

−7.0

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

V^CEO

V^EBO

−8.0

I^C(DC)

−12

I^C(pulse)*

I^B(DC)

−0.8

P^T(Tc = 25°C)

P^T(Ta = 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

2.0

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

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2002

1998

12 3 4 5 6

中文翻译

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与2SB1431-K相关器件

型号	品牌	获取价格	描述	数据表
2SB1431-K-AZ	RENESAS	获取价格	暂无描述
2SB1431-L	NEC	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1431-L	RENESAS	获取价格	暂无描述
2SB1431-L-AZ	RENESAS	获取价格	8A, 100V, PNP, Si, POWER TRANSISTOR
2SB1431-L-AZ	NEC	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1431-M	NEC	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1431-M	RENESAS	获取价格	8A, 100V, PNP, Si, POWER TRANSISTOR
2SB1431-M-AZ	RENESAS	获取价格	8A, 100V, PNP, Si, POWER TRANSISTOR
2SB1431-M-AZ	NEC	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1432	NEC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIER

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