生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.21 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 100 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 2000 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 20 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 80 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1430-M-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1430-M-AZ | RENESAS |
获取价格 |
5A, 100V, PNP, Si, POWER TRANSISTOR | |
2SB1431 | NEC |
获取价格 |
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIER | |
2SB1431 | RENESAS |
获取价格 |
SILICON POWER TRANSISTOR | |
2SB1431 | NJSEMI |
获取价格 |
Trans Darlington PNP 100V 8A Automotive 3-Pin(3+Tab) TO-220F | |
2SB1431-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1431-K | RENESAS |
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暂无描述 | |
2SB1431-K | NEC |
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暂无描述 | |
2SB1431-K-AZ | RENESAS |
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暂无描述 | |
2SB1431-L | NEC |
获取价格 |
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, |