Datasheet > 2SB1429_2014

2SB1429_2014

更新时间： 2024-11-11 01:18:55

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	204K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1429_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1429

DESCRIPTION

·With TO-3PL package

·Complement to type 2SD2155

APPLICATIONS

·Power amplifier applications

·Recommend for 100W high fidelity audio

frequency amplifier output stage

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PL) and symbol

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-180

-5

UNIT

Open base

Open collector

-15

I_B

Base current

-1.5

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

150

℃

T_j

150

T_stg

-55~150

12 3 4

中文翻译

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与2SB1429_2014相关器件

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2SB1429O	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 180V V(BR)CEO \| 15A I(C) \| TO-247VAR
2SB1429-O	TOSHIBA	获取价格	TRANSISTOR 15 A, 180 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
2SB1429R	TOSHIBA	获取价格	TRANSISTOR 15 A, 180 V, PNP, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Pow
2SB1430	NEC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIER
2SB1430	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1430	ISC	获取价格	isc Silicon PNP Darlington Power Transistor
2SB1430K	NEC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| TO-220VAR
2SB1430-K	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR
2SB1430-K-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1430-K-AZ	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR